BOISE, Idaho, Jun 30, 2010 (GlobeNewswire via COMTEX News Network) -- Micron Technology, Inc. (Nasdaq:MU) today introduced its third-generation reduced latency DRAM (RLDRAM® 3 memory), a high-bandwidth memory technology that enables a more efficient transfer of information across the network. The proliferation of video content, mobile applications and cloud computing has created the need for a more effective network infrastructure that can keep pace with the amount of data being moved online. As compared with previous generations, Micron's new RLDRAM 3 memory offers a further increase in density and speed, while minimizing latency and reducing power consumption for higher performing networking applications.
"Micron's RLDRAM 3 memory meets the growing need for technology that can support the increases to network traffic as we watch Internet content consumption continue to grow," said Robert Feurle, vice president of DRAM marketing for Micron.
Micron is also continuing to provide the highest levels of support for its current generation RLDRAM 2 technology and is planning long-term production of the product. Additionally, Micron is transitioning its RLDRAM 2 product portfolio to the more advanced 50nm process technology, boosting system performance and lowering power consumption.
Product Features of RLDRAM 3 Memory
The primary features and benefits of Micron's new RLDRAM 3 memory include:
Building an RLDRAM Ecosystem
Micron maintains a broad ecosystem of partners that have validated its RLDRAM memory solutions for ease of integration into networking equipment. Micron's collaboration with its extensive network of partners and enablers provides customers with tailored-made solutions that optimize networking system performance. As part of this valued ecosystem, Micron is currently working with leading FPGA companies including Altera Corporation and Xilinx to design RLDRAM 3 memory into their family of products.
"Altera's 28nm Stratix V FPGAs include new, hardened datapaths that enable high-performance and low-latency interfaces to Micron's memories," said Luanne Schirrmeister, senior director of component product marketing at Altera. "The release of RLDRAM 3 memory allows us to offer memory bandwidth as high as 1600 Mbps, the highest in the industry, at dramatically lower latency. Enabled by Micron's new memory offering and Altera's new memory interface architecture, this technical achievement is one of many pinnacles in our multi-year technical partnership with Micron."
"Xilinx 7 series FPGAs are enabling the most advanced networking equipment to keep pace with the insatiable need for bandwidth worldwide," said Rina Raman, Senior Director, Applications and Technical Marketing at Xilinx. "As a result of our work with Micron to support their new RLDRAM 3 technology, we are enabling our customers to develop networking platforms that meet the most rigorous infrastructure demands."
Micron is expected to begin sampling its RLDRAM 3 device in the first half of 2011 and is currently working with customers and enablers for their design considerations of RLDRAM 3 memory. Additionally, Micron expects to begin sampling 50nm RLDRAM 2 products in the fourth quarter of 2010.
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Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as well as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
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Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. RLDRAM is a registered trademark of Qimonda AG in various countries, and is used by Micron Technology, Inc. under license from Qimonda.
This press release contains forward-looking statements regarding the production of Micron's new RLDRAM 3 memory and availability of 50 nm RLDRAM 2 samples. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents Micron files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically Micron's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for Micron on a consolidated basis to differ materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements.
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SOURCE: Micron Technology, Inc.
CONTACT: Micron Technology, Inc.
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